Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures

J. Z. Zeng; S. Z. Deng; J. C. She; H. He; N. S. Xu; Hongshan He

doi:10.1063/1.3481061

Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures

J. Z. Zeng, S. Z. Deng, J. C. She, H. He, N. S. Xu, Hongshan He

Eastern Illinois University

Sun Yat-sen University

Producción científica › revisión exhaustiva

Idioma original	American English
Publicación	Journal of Applied Physics
Volumen	108
DOI	https://doi.org/10.1063/1.3481061
Estado	Published - sept 1 2010

Disciplines

Physics
Condensed Matter Physics

Acceder al documento

10.1063/1.3481061Licencia: Unspecified

Otros archivos y enlaces

http://adsabs.harvard.edu/abs/2010JAP...108e4305Z

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title = "Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures",

author = "Zeng, \{J. Z.\} and Deng, \{S. Z.\} and She, \{J. C.\} and H. He and Xu, \{N. S.\} and Hongshan He",

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AU - Xu, N. S.

AU - He, Hongshan

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