Fabrication and characterization of thin, self‐supporting germanium single crystals

M. W. Grant; P. F. Lyman; J. H. Hoogenraad; Barbara S. Carlsward; D. A. Arms; L. E. Seiberling; F. Namavar

Fabrication and characterization of thin, self‐supporting germanium single crystals

M. W. Grant, P. F. Lyman, J. H. Hoogenraad, Barbara S. Carlsward, D. A. Arms, L. E. Seiberling, F. Namavar

Eastern Illinois University

University of Florida

Producción científica › revisión exhaustiva

Resumen

Thin Gesingle crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxialGefilmsgrown by atmospheric pressurechemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Gefilm near the interface that contains misfit dislocations associated with heteroepitaxialgrowth and relaxation of the Gefilms. The resulting Gefilms are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

Idioma original	American English
Publicación	Journal of Applied Physics
Volumen	73
Estado	Published - 1993

Disciplines

Biology

Acceder al documento

fulltext.pdfFinal published version, 378 KBLicencia: Unspecified

Citar esto

@article{0adf1f3c6f594dca82d1fd260c252e1f,

title = "Fabrication and characterization of thin, self‐supporting germanium single crystals",

abstract = " Thin Gesingle crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxialGefilmsgrown by atmospheric pressurechemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Gefilm near the interface that contains misfit dislocations associated with heteroepitaxialgrowth and relaxation of the Gefilms. The resulting Gefilms are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.",

author = "Grant, \{M. W.\} and Lyman, \{P. F.\} and Hoogenraad, \{J. H.\} and Carlsward, \{Barbara S.\} and Arms, \{D. A.\} and Seiberling, \{L. E.\} and F. Namavar",

year = "1993",

language = "American English",

volume = "73",

journal = "Journal of Applied Physics",

}

TY - JOUR

T1 - Fabrication and characterization of thin, self‐supporting germanium single crystals

AU - Grant, M. W.

AU - Lyman, P. F.

AU - Hoogenraad, J. H.

AU - Carlsward, Barbara S.

AU - Arms, D. A.

AU - Seiberling, L. E.

AU - Namavar, F.

PY - 1993

Y1 - 1993

N2 - Thin Gesingle crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxialGefilmsgrown by atmospheric pressurechemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Gefilm near the interface that contains misfit dislocations associated with heteroepitaxialgrowth and relaxation of the Gefilms. The resulting Gefilms are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

AB - Thin Gesingle crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxialGefilmsgrown by atmospheric pressurechemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Gefilm near the interface that contains misfit dislocations associated with heteroepitaxialgrowth and relaxation of the Gefilms. The resulting Gefilms are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

M3 - Article

VL - 73

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -