Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures

J. Z. Zeng; S. Z. Deng; J. C. She; H. He; N. S. Xu; Hongshan He

doi:10.1063/1.3481061

Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures

J. Z. Zeng, S. Z. Deng, J. C. She, H. He, N. S. Xu, Hongshan He

Eastern Illinois University

Sun Yat-sen University

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Journal of Applied Physics
Volume	108
DOIs	https://doi.org/10.1063/1.3481061
State	Published - Sep 1 2010

Disciplines

Physics
Condensed Matter Physics

Access to Document

10.1063/1.3481061License: Unspecified

Cite this

@article{33a8106161984efab3dba8e156e0c40c,

title = "Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures",

author = "Zeng, \{J. Z.\} and Deng, \{S. Z.\} and She, \{J. C.\} and H. He and Xu, \{N. S.\} and Hongshan He",

note = "Affiliation: AA(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, People's Republic of China), AB(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School",

year = "2010",

month = sep,

day = "1",

doi = "10.1063/1.3481061",

language = "American English",

volume = "108",

journal = "Journal of Applied Physics",

}

TY - JOUR

T1 - Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures

AU - Zeng, J. Z.

AU - Deng, S. Z.

AU - She, J. C.

AU - He, H.

AU - Xu, N. S.

AU - He, Hongshan

N1 - Affiliation: AA(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, People's Republic of China), AB(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School

PY - 2010/9/1

Y1 - 2010/9/1

UR - http://adsabs.harvard.edu/abs/2010JAP...108e4305Z

U2 - 10.1063/1.3481061

DO - 10.1063/1.3481061

M3 - Article

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures

Disciplines

Access to Document

Other files and links

Cite this